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讲座通知:Monolithic Integration of GaN Devices for Light Emitting/ Receiving Application

作者:杨涵     点击:102      时间:2017-11-01

 

报告人:蔡月飞博士

时间:11月3日(星期五)上午9:40

地点:动力与机械学院报告厅

欢迎广大师生踊跃参加!

Abstract

Optoelectronic Integrated circuits (OEIC) has found many applications in short-distance communication, intelligent display and sensing. A lot of research works have been done for silicon or III-V based materials using hybrid integration, but for the monolithic integration method, especially for the monolithic integration based on GaN materials, there are few research works. Beneficial from the mature technology of the III-nitride devices such as LED, photodiode and the power or RF device (HEMT) and the reliable and robust material properties of III-nitride semiconductor itself, III-nitride material shows great potential to serve as an integrated optoelectronic platform. In this talk, monolithic integration of GaN optoelectronic devices for the light emitting and receiving applications will be presented. In the first part of the monolithic integration work, we integrate discrete LEDs in series into a high voltage LED (HVLED) to serve as an effective light source. Then the integration of an LED with a GaN HEMT to achieve a modulated light emitter for light transmitting will be talked. In the third part, a GaN HEMT is integrated with a metal-semiconductor-metal photodiode (MSM-PD) and other on-wafer passive components (feedback resistor and capacitor) based on the same HEMT epitaxial structure to form a monolithically integrated photoreceiver. Finally, we summarize our work and suggest some future works in this field.

Biography

Mr. Yuefei Cai received his bachelor and master degree from Harbin Institute of Technology in 2011 and 2013, respectively. Now he is pursuing his PhD degree in Electronic and Computer Department of the Hong Kong University of Science and Technology (HKUST). He will graduate from HKUST in January, 2018. His research interests include design, fabrication and characterization of III-nitride devices, including GaN HEMT, light emitting diode (LED) and photodiodes (PD) and monolithic integration of GaN devices for sensing and communication applications.

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