致力于电子材料与器件设计相关领域，已经在Appl. Phys. Lett., IEEE Trans. Electron Devices, ACS Appl. Mater. Interface, Adv. Funt. Mater., Nat. Comm.等期刊发表SCI期刊论文100余篇，其中第一/通讯作者60余篇；以第一作者发表国际会议论文共20篇，包括电子器件领域国际最顶级学术会议论文IEDM 1篇和特邀报告2篇；参与撰写Wiley英文专著章1章节；谷歌学术h-index为29，引用2600余次。完整文章列表参考：
谷歌学术链接：https://scholar.google.com/citations?user=GqUdqyIAAAAJ&hl=en
ResearchGate链接：https://www.researchgate.net/profile/Zhaofu-Zhang-4/research
Web of Science链接：https://www.webofscience.com/wos/author/record/1990500
专著:
J. Robertson, Z. Zhang, Chapter: “Electronic Structure of Transparent Amorphous Oxide Semiconductors”, Chapter 3 in “Amorphous Oxide Semiconductors”, edited by H. Hosono, Wiley, West Sussex, UK (2022).
入职后期刊文章(#共同一作者; *通信作者):
[1] (Editor’s Pick) J. Chen, Z. Zhang, Y. Guo, and J. Robertson*, Revisiting the electronic and optical properties of SiO2 polymorphs by hybrid functional calculations, J. Appl. Phys. 133, 044101 (2023)
[2] H. Guo, Y. Yin, W. Yu, J. Robertson, S. Liu, Z. Zhang*, Y. Guo*, Quantum transport of sub-5 nm InSe and In2SSe monolayer and their heterostructure transistors, Nanoscale 15, 3496 (2023)
[3] C. Cheng#, Z. Zhang#, X. Sun, Q. Gui, G. Wu, F. Dong, D. Zhang, Y. Guo*, S. Liu*, Ab-initio study of Schottky barrier heights at metal-diamond (111) interfaces, Appl. Surf. Sci. 615, 156329 (2023)
[4] X. Wan, Z. Zhang, A. Wang, J. Su, W. Zhou, J. Robertson, Y. Peng, Y. Zheng*, and Y. Guo*, Deep-Learning-Assisted theoretical evaluation of Compatibility of Eco-friendly Insulation Medium CF3SO2F with Cu, Al, CuO, Al2O3, and epoxy resin, High Voltage (2023)
[5] Q. Gui, Z. Wang, C. Cheng, X. Zha, J. Robertson, S. Liu, Z. Zhang*, Y. Guo*, Theoretical study of the interface engineering for H-diamond field effect transistors with h-BN gate dielectric and graphite gate, Appl. Phys. Lett. 121, 211601 (2022)
[6] Y. Yin, Z. Zhang*, C. Shao, J. Robertson, Y. Guo*, Computational Study of Transition Metal Dichalcogenide Cold Source MOSFETs with Sub-60 mV per decade and Negative Differential Resistance Effect, NPJ 2D Mater. Appl. 6, 55 (2022)
[7] X. Wan#, Z. Zhang#, W. Yu, H. Niu, X. Wang, Y. Guo*, Machine-Learning-Assisted Discovery of Highly Efficient High Entropy Alloy Catalysts for the Oxygen Reduction Reaction, Patterns 3, 100553 (2022)
[8] J. Chen, Z. Zhang*, Y. Guo, J. Robertson, Metal Contacts with Moire interfaces on WSe2 for Ambipolar Applications, Appl. Phys. Lett. 121, 051602 (2022)
[9] R. Cheng, L. Yin, Y. Wen, B. Zhai, Y. Guo, Z. Zhang, W. Liao, W. Xiong, H. Wang, S. Yuan, J. Jiang, C. Liu, and J. He, Ultrathin ferrite nanosheets for room-temperature two-dimensional magnetic semiconductors, Nat. Comm. 13, 5241 (2022)
入职前部分文章:
[1] Z. Zhang, Y. Guo, and J. Robertson*, Reduced Fermi Level Pinning using Physisorptive Moire-MoS2/Metal Schottky Barriers, ACS Appl. Mater. Interface 14, 11903 (2022)
[2] Z. Zhang, Y. Guo, and J. Robertson*, p-Type Semiconduction in Oxides with Cation Lone Pairs, Chem. Mater. 34, 643 (2022)
[3] Z. Zhang, Z. Wang, Y. Guo, and J. Robertson*, Carbon Cluster Formation and Mobility Degradation in 4H-SiC MOSFETs, Appl. Phys. Lett. 118, 031601 (2021)
[4] Z. Zhang, Y. Guo, and J. Robertson*, Termination-dependence of Fermi level pinning at rare-earth arsenide/GaAs interfaces, Appl. Phys. Lett. 112, 251602 (2020)
[5] Z. Zhang, Y. Guo, H. Lu, S. Clark, and J. Robertson*, Hybrid band offset calculation for heterojunction interfaces between disparate semiconductors, Appl. Phys. Lett. 116, 131602 (2020)
[6] Z. Zhang, Y. Guo and J. Robertson*, Chemical bonding and band alignment at X2O3/GaN (X = Al, Sc) interfaces, Appl. Phys. Lett. 114, 161601 (2019)
[7] Z. Zhang, Q. Qian, B. Li, and K. J. Chen*, Interface Engineering of Monolayer MoS2/GaN Hybrid Heterostructure: Modified Band Alignment for Photocatalytic Water Splitting Application by Nitridation Treatment, ACS Appl. Mater. Interfaces 10, 17419 (2018)
[8] Z. Zhang, R. Cao, C. Wang, H. Li, H. Dong, W. Wang, F. Lu, Y. Cheng, X. Xie, H. Liu, K. Cho, R. Wallace, and W. Wang*, GaN as an Interfacial Passivation Layer: Tuning Band Offset and Removing Fermi Level Pinning for III-V MOS Devices, ACS Appl. Mater. Interfaces 7(9), 5141 (2015)
[9] Z. Zhang, Y. Guo, and J. Robertson*, Electronic structure of amorphous copper iodide: A p-type transparent semiconductor, Phys. Rev. Mater. 4, 054603 (2020)
[10] Z. Zhang, Y. Guo, and J. Robertson*, Origin of Weaker Fermi Level Pinning and Localized Interface States at Metal Silicide Schottky Barriers, J. Phys. Chem. C 124, 19692 (2020)
[11] Z. Zhang, B. Li, Q. Qian, X. Tang, M. Hua, B. Huang, and K. J. Chen*, Revealing the Nitridation Effects on GaN Surface by First-Principles Calculation and X-Ray/Ultraviolet Photoemission Spectroscopy, IEEE Trans. Electron Devices 64(10), 4036 (2017)
[12] Z. Zhang#,*, B. Huang#, Q. Qian, Z. Gao, X. Tang, and B. Li*, Strain-tunable III-Nitride/ZnO heterostructures for photocatalytic water-splitting: A hybrid functional calculation, APL Mater. 8, 041114 (2020)
[13] Z. Zhang, M. Hua, J. He, G. Tang, Q. Qian, and K. J. Chen*, Ab-initio Study of the Impact of Nitridation at Amorphous-SiNx/GaN Interface, Appl. Phys. Express 11, 081003 (2018)
[14] Z. Zhang, Y. Guo, and J. Robertson*, Phase dependence of Schottky barrier heights for Ge-Sb-Te and related phase change materials, J. Appl. Phys. 127, 155301 (2020)
[15] Z. Zhang, Y. Guo, and J. Robertson*, Role of the third metal oxide in In–Ga–Zn–O4 amorphous oxide semiconductors: Alternatives to gallium, J. Appl. Phys. 128, 215704 (2020)
[16] Y. Liao#, Z. Zhang#,*, Z. Gao, Q. Qian, and M. Hua*, Tunable properties of novel Ga2O3 monolayer for electronics and optoelectronics applications, ACS Appl. Mater. Interfaces 12, 30659 (2020)
[17] J. Zhao#,*, X. Wang#, H. Chen, Z. Zhang*, and M. Hua∗,Two-Dimensional Ferroelectric Ga2O3 Bilayers with Unusual Strain-Engineered Interlayer Interactions, Chem. Mater. 34, 3648 (2022)
[18] Y. Yin, Z. Zhang*, H. Zhong, C. Shao, X. Wan, C. Zhang, J. Robertson, and Y. Guo*, Tellurium Nanowire Gate-All-Around MOSFETs for Sub‑5 nm Applications, ACS Appl. Mater. Interfaces, 13, 3387 (2021)
[19] Y. Yin, C. Shao, C. Zhang, Z. Zhang*, X. Zhang, J. Robertson and Y. Guo*, Anisotropic Transport Property of Antimonene MOSFETs, ACS Appl. Mater. Interfaces, 12, 22378 (2020)
[20] X. Liu, Z. Gao, V. Wang, Z. Luo, B. Lv, Z. Ding*, and Z. Zhang*, Extrapolated Defect Transition Level in Two-Dimensional Materials: The Case of Charged Native Point Defects in Monolayer Hexagonal Boron Nitride, ACS Appl. Mater. Interfaces 12, 17055 (2020)
[21] (封底文章) J. Zhao#*, X. Huang#, Y. Yin#, Y. Liao, H. Mo, Q. Qian, Y. Guo, X. Chen, Z. Zhang*, and M. Hua*, Two-Dimensional Gallium Oxide Monolayer for Gas Sensing Application, J. Phys. Chem. Lett. 12, 5813 (2021)
[22] (封面文章) X. Wan, Z. Zhang*, W. Yu, and Y. Guo*, A density-functional-theory-based and machine-learning-accelerated hybrid method for intricate system catalysis, Materials Reports: Energy 3, 100046 (2021)
[23] Z. Wang#, Z. Zhang#, S. Liu, C. Shao, J. Robertson, Y. Guo, Impact of Carbon-Carbon Defects at the SiO2/4H-SiC (0001) Interface: A First-Principles Calculation J. Phys. D: Appl. Phys. 55, 025109 (2021)
[24] Z. Wang#, Z. Zhang#, S. Liu, J. Robertson, and Y. Guo*, Electronic properties and tunability of the hexagonal SiGe alloys, Appl. Phys. Lett. 118, 172101 (2021)
[25] (热点文章) H. Guo#, Z. Zhang#, B. Huang, X. Wang, H. Niu, Y. Guo, B. Li, R. Zheng, and H. Wu*, Theoretical study on the photocatalytic properties of 2D InX(X=S, Se)/transition metal disulfide (MoS2 and WS2) van der Waals heterostructures, Nanoscale 12, 20025 (2020)
[26] J. Chen, Z. Zhang*, Y. Guo, J. Robertson, Electronic properties of CaF2 bulk and interfaces, J. Appl. Phys. 131, 215302 (2022)
[27] J. Chen, Z. Zhang*, Y. Guo and J. Robertson, Schottky Barrier Heights of Defect-free Metal/ZnO, CdO, MgO and SrO Interfaces, J. Appl. Phys. 118, 172101 (2021)
[28] Q. Zhou#, Z. Zhang#, H. Li, S. Golovynskyi, X. Tang, H. Wu, J. Wang, and B. Li*, Below bandgap photoluminescence of an AlN crystal: Co-existence of two different charging states of a defect center, APL Mater. 8, 081107 (2020)
[29] Z. Wang#, Z. Zhang#, C. Shao, J. Robertson, S. Liu*, and Y. Guo*, Tuning the high-κ oxide (HfO2, ZrO2)/4H-SiC interface properties with a SiO2 interlayer for power device applications, Appl. Surf. Sci. 527, 146843 (2020)
[30] H. Guo#, Z. Zhang#,*, Y. Guo, Z. Gao, R. Zheng, and H. Wu*, Impact of the interface vacancy on Schottky barrier height for Au/AlN polar interfaces, Appl. Surf. Sci. 505, 144650 (2020)
[31] (ESI热点文章)H. Niu, Z. Zhang*, X. Wang, X. Wan, C. Shao, and Y. Guo*, Theoretical Insights into the Mechanism of Selective Nitrate-to-Ammonia Electroreduction on Single-Atom Catalyst, Adv. Funct. Mater. 31, 2008533 (2021)
[32] X. Wan, W. Yu, H. Niu, X. Wang, Z. Zhang*, and Y. Guo*, Revealing the Oxygen Reduction/Evolution Reaction Activity Origin of Carbon-Nitride-Related Single-Atom catalysts: Quantum Chemistry in Artificial Intelligence, Chem. Eng. J. 307, 121201 (2022)
[33] (ESI高被引文章)H. Niu#, X. Wan#, X. Wang, C. Shao, J. Robertson, Z. Zhang*, and Y. Guo*, Single-Atom Rhodium on Defective g-C3N4: A Promising Bifunctional Oxygen Electrocatalyst, ACS Sustainable Chem. Eng. 9, 3590, (2021)
[34] (ESI高被引文章)H. Niu, X. Wang, C. Shao, Z. Zhang*, and Y. Guo*, Computational Screening Single-Atom Catalysts Supported on g-CN for N2 Reduction: High Activity and Selectivity, ACS Sustainable Chem. Eng. 8, 13749 (2020)
[35] X. Wan, Z. Zhang*, H. Niu, Y. Yin, C. Shao, and Y. Guo*, Machine-Learning-Accelerated Catalytic Activity Predictions of Transition Metal Phthalocyanine Dual-Metal-Sites Catalysts for CO2 Reduction, J. Phys. Chem. Lett. 12, 6111 (2021)
科研项目经历
[1] 金属半导体接触物理机制的第一性原理计算研究，广东省基础与应用基础研究基金省市联合基金项目，青年基金，10万元，2022.10-2025.09，主持。
[2] 武汉大学人才科研启动经费，主持。
[3] 基于驱动集成型氮化镓器件的超小型高效电源适配器的开发，广东省科学技术厅，2017.4-2019.3，200万元，参与。
[4] 基20160046氮化镓电力电子器件中电子陷阱抑制方法研究，深圳市科技创新委员会，2016.2-2019.6，200万元， 参与。
[5] EPSRC grant, Integration of Novel Materials in Spintronic Devices，2016.4-2022.3，合人民币约850万元，参与。
[6] European Union's Horizon 2020 research and innovation program, grant 737109, Phasechange Switch，2017.1-2020.11，合人民币约2790万元，参与。
国际会议（仅列一作者）
[1] (特邀报告) Z. Zhang et al. Revealing the Mobility Degradation Mechanism in 4H-SiC MOSFETs by First-principles Calculations, 第十届IEEE下一代电子国际学术会议(ISNE2022), 无锡, 中国 (2022).
[2] (特邀报告) Z. Zhang et al. P-type oxides for Back-end-of-line Semiconductor Devices, in ICANS29, Nanjing, China (2022).
[3] Z. Zhang et al. Alternatives to Ga in In-Ga-Zn-O4 amorphous oxide semiconductors, in ICANS29, Nanjing, China (2022).
[4] Z. Zhang et al. A revisit of the oxidation and passivation mechanisms of SiC/SiO2 interfaces, in 53th IEEE SISC, San Diego, USA (2022).
[5] Z. Zhang et al. Mobility Degradation in 4H-SiC MOSFETs and Interfacial Carbon Cluster Formation, in APCSCRM 2022, Xuzhou, China (2022).
[6] Z. Zhang et al. Oxidation and passivation mechanisms for SiC/SiO2 interfaces, in 52th IEEE SISC, San Diego, USA (2021).
[7] Z. Zhang et al. Ptype oxides in Backendofline Semiconductor Devices, in 52th IEEE SISC, San Diego, USA (2021).
[8] Z. Zhang et al. Mobility Degradation in 4H-SiC MOSFETs and Carbon Cluster Formation, in INFOS 2021, Rende, Italy (2021).
[9] Z. Zhang et al. Impact of termination on Fermi level pinning at rare-earth arsenide/GaAs interfaces, in 51th IEEE SISC, San Diego, USA (2020).
[10] Z. Zhang et al. in Alternatives to Ga in In-Ga-Zn-O4 amorphous oxide semiconductors, in 51th IEEE SISC, San Diego, USA (2020). (口头报告)
[11] Z. Zhang et al. Band alignment calculation of dielectric films on GaN, in 50th IEEE SISC, San Diego, USA (2019).
[12] Z. Zhang et al. Influence of phase on Schottky barrier heights of Ge-Sb-Te based materials, in 50th IEEE SISC, San Diego, USA (2019).
[13] Z. Zhang et al. Defects of h-BN suitable for single photon emitters, in EPSRC/JSPS/CNRS C2C 2019 Seminar, Sendai, Japan (2019). (口头报告)
[14] Z. Zhang et al. Ge-Sb-Te: Influence of Phase on Schottky Barrier Heights, in EPCOS 2019, Grenoble, France (2019). (口头报告)
[15] Z. Zhang et al. Band alignment and chemical bonding at Sc2O3/GaN interface, in INFOS 2019, Cambridge, UK (2019).
[16] Z. Zhang et al. Density Functional Calculation of Dielectric films on VO2, in INFOS 2019, Cambridge, UK (2019).
[17] Z. Zhang et al. Modification of amorphous-SiNx/GaN Interface Trap Density by Nitridation: A First-Principles Calculation Study, in CS-MANTECH 2018, Austin, USA (2018). (口头报告)
[18] Z. Zhang, B. Li, X. Tang, Q. Qian, M. Hua, B. Huang, and K. J. Chen, Nitridation of GaN Surface for Power Device Application: A First-Principles Study, In 2016 Int. Electron Device Meeting (IEDM 2016), pp. 906-909, Dec., 2016. （口头报告; 电子器件领域最顶尖国际学术会议）
[19] Z. Zhang et al. First-Principles Study of GaN Surface Electronic Structures with Ga, O or N Adatom, in 47th IEEE SISC. San Diego, USA (2016). (口头报告)
[20] Z. Zhang et al. Bonding, Stability and Band Offsets of GaN/HfO2 Interface Influenced by Interfacial Oxygen Content: A First-Principles Study, in 45th IEEE SISC, San Diego, USA (2014).
