武大首页
中文
English

您现在的位置： 网站首页 > Faculty > Part time teachers > 正文
Faculty
 

周圣军

ZHOU SHENG JUN


职称/学术兼职

教授、博导

    职位

    联系方式

     zhousj@whu.edu.cn

    主要研究方向

    GaN基蓝光LED外延和芯片；AlGaN基紫外LED外延和芯片；纳米压印技术 (Nanoimprinting lithography)

    教育工作经历

    美国密歇根大学（University of Michigan, Ann Arbor）   2014.07-2015.07

    ● 电子工程与计算机系（EECS），Research Fellow

    上海交通大学                                    2011.12 –2014.03


    • 机械工程博士后流动站点 博士后

    上海交通大学                                    2008.9 -2011.12

    ● 专业：微电子学与固体电子学 博士  

        武汉理工大学                                    2005.09 -2008.07

    ● 专业：机械电子工程 硕士  

        武汉理工大学                                    2001.09 -2005.07

    ● 专业：电子科学与技术 本科

    工业界经历

    广东量晶光电科技有限公司 (LED外延和芯片制造企业，10台MOCVD设备)  

    2011年12月-2014年5月

     ● 担任研发主管，负责广东量晶光电科技有限公司的大功率LED芯片及高压LED芯片的研发和产业化工作。2014年，我负责研发的大功率LED芯片的发光效率达到175 lm/W@350 mA。

    佛山国星光电股份有限公司 (中国最大的LED封装上市企业之一)  

    2006年7月-2007年12月


    • ● 担任项目主管，研制全自动SMD LED在线测试分选设备，负责研发的LED在线测试分选设备已经应用于多家LED封装企业的产品生产线。

    论文发表和专利


    2. Shengjun Zhou*, Haohao Xu, Bin Tang, Yingce Liu, Hui Wan, and Jiahao Miao, High-power and reliable vertical light-emitting diodes on 4-inch silicon substrate, Optics Express, (2019).


    2. Qiang Zhao, Jiahao Miao, Shengjun Zhou*, Chengqun Gui, Bin Tang, Mengling Liu, Hui Wan and Jinfeng Hu, High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate, Nanomaterials, 9(8), 1178 (2019).


    2. Bin Tang, Jiahao Miao, Yingce Liu, Shengjun Zhou*, Haohao Xu and Hui Wan, Insights Into the Influence of Sidewall Morphology on the Light Extraction Efficiency of Mini-LEDs， IEEE Photonics Journal, 11(4), 1-7 (2019).


    2. Jie Zhao, Xingtong Liu, Haohao Xu, Jiahao Miao, Jinfeng Hu and Shengjun Zhou*, High-Performance Green Flip-Chip LEDs with Double-Layer Electrode and Hybrid Reflector, ECS Journal of Solid State Science and Technology, 8(8), Q153-Q157 (2019).


    2. Shengjun Zhou, Xingtong Liu, Han Yan, Zhiwen Chen, Yingce Liu, and Sheng Liu*, Highly efficient GaN-based high-power flip-chip light-emitting diodes, Optics Express 27(12), 669 (2019).


    2. Hongpo Hu, Shengjun Zhou*, Hui Wan, Xingtong Liu, Ning Li and Haohao Xu, Effect of strain relaxation on performance of InGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AlN nucleation layer, Scientific Reports 9, 3447 (2019).


    2. Hui Wan, Bin Tang, Ning Li, Shengjun Zhou*, Chengqun Gui and Sheng Liu, Revealing the Role of Sidewall Orientation in Wet Chemical Etching of GaN-Based Ultraviolet Light-Emitting Diodes, Nanomaterials 9(3), 365 (2019).


    2. Jie Zhao, Xinghuo Ding, Jiahao Miao, Jinfeng Hu, Hui Wan and Shengjun Zhou*, Improvement in Light Output of Ultraviolet Light-Emitting Diodes with Patterned Double-Layer ITO by Laser Direct Writing, Nanomaterials 9(2), 203 (2019).


    2. Bin Tang, Jia Miao, Yingce Liu, Hui Wan, Ning Li, Shengjun Zhou* and Chengqun Gui, Enhanced Light Extraction of Flip-Chip Mini-LEDs with Prism-Structured Sidewall, Nanomaterials 9(3), 319 (2019).


    2. Shengjun Zhou*, Haohao Xu, Hongpo Hu, Chengqun Gui and ShengLiu, High quality GaN buffer layer by isoelectronic doping and its application to 365 nm InGaN/AlGaN ultraviolet light-emitting diodes, Applied Surface Science 471(31), 231-238 (2019).


    2. Shengjun Zhou*, Haohao Xu, Mengling Liu, Xingtong Liu, Jie Zhao, Ning Li and Sheng Liu, Effect of Dielectric Distributed Bragg Reflector on Electrical and Optical Properties of GaN-Based Flip-Chip Light-Emitting Diodes, Micromachines, 9(12), 650 (2018).


    2. Shengjun Zhou*, Mengling Liu, Haohao Xu, Yingce Liu, Yilin Gao, Xinghuo Ding, Shuyu Lan, Yuchen Fan, Chengqun Gui, and Sheng Liu, High-efficiency GaN-based LED with patterned SiO2 current blocking layer deposited on patterned ITO, Optics and Laser Technology109, 627 (2019).


    2. Shengjun Zhou*, Xingtong Liu, Han Yan, Yilin Gao, Haohao Xu, Jie Zhao, Zhijue Quan, Chengqun Gui, and Sheng Liu, The effect of nanometre-scale V-pits on electronic and optical properties and efficiency droop of GaN-based green light-emitting diodes, Scientific Reports 8, 11053 (2018).


    2. Mengling Liu, Jie Zhao , Shengjun Zhou*, Yilin Gao, Jinfeng Hu , Xingtong Liu, and Xinghuo Ding, An InGaN/GaN Superlattice to Enhance the Performance of Green LEDs: Exploring the Role of V-Pits, Nanomaterials 8, 450(2018).


    2. Xingtong Liu, Ning Li, Jinfeng Hu, Yinlin Gao, Ruiqing Wang, and Shengjun Zhou*, Comparative Study of Highly Reflective ITO/DBR and Ni/Ag ohmic Contacts for GaN-Based Flip-Chip Light-Emitting Diodes, ECS Journal of Solid State Science and Technology 7, Q116-Q122(2018).


    2. Shengjun Zhou*, Jiajiang Lv, Yini Wu, Yuan Zhang, Chenju Zheng, and Sheng Liu*, Reverse leakage current characteristics of InGaN/GaN multiple quantum well ultraviolet/blue/green light-emitting diodes, Japanese Journal of Applied Physics 57, 051003 (2018).


    2. Shengjun Zhou*, Yilin Gao, Chenju Zheng, Yingce Liu, Hongpo Hu, Jiajiang Lv, and Xingtong Liu, A comparative study of GaN-based direct current and alternating current high voltage light-emitting diodes, Physica Status Solidi A 215, 1700554 (2018).


    2. Chengqun Gui, Xinghuo Ding, Shengjun Zhou*, Yilin Gao, Xingtong Liu, Sheng Liu, Nanoscale Ni/Au wire grids as transparent conductive electrodes in ultraviolet light-emitting diodes by laser direct writing, Optics & Laser Technology 104, 112 (2018).


    2. Mengling Liu, Shengjun Zhou*, Xingtong Liu, Yilin Gao, and Xinghuo Ding, Comparative experimental and simulation studies of high-power AlGaN-based 353 nm ultraviolet flip-chip and top-emitting LEDs, Japanese Journal of Applied Physics 57, 031001 (2018).


    2. Shengjun Zhou, Xingtong Liu, Yilin Gao, Yingce Liu, Zongyuan Liu, Chengqun Gui, and Sheng Liu, Numerical and experimental investigation of GaN-based flip-chip light-emitting diodes with highly reflective Ag/TiW and ITO/DBR Ohmic contacts, Optics Express 25, 26615 (2017).


    2. Xingtong Liu, Shengjun Zhou*, Yilin Gao, Hongpo Hu, Yingce Liu, Chengqun Gui and Sheng Liu, Numerical simulation and experimental investigation of GaN-based flip-chip LEDs and top-emitting LEDs , Applied Optics 56, 9502 (2017).


    2. Hongpo Hu, Shengjun Zhou*, Xingtong Liu, Yilin Gao, Chengqun Gui, Sheng Liu, Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes, Scientific Reports 7, 44627 (2017).


    2. Shengjun Zhou, Hongpo Hu, Xingtong Liu, Mengling Liu, Xinghuo Ding, Chengqun Gui, Sheng Liu, and L. Jay Guo, Comparative study of GaN-based ultraviolet LEDs grown on different-sized patterned sapphire substrates with sputtered AlN nucleation layer, Japanese Journal of Applied Physics 56, 111001 (2017).


    2. Shengjun Zhou, Mengling Liu, Hongpo Hu, Yilin Gao, Xingtong Liu, Effect of ring-shaped SiO2 current blocking layer thickness on the external quantum efficiency of high power light-emitting diodes, Optics & Laser Technology 97, 137 (2017).


    2. Mengling Liu, Yilin Gao, Hongpo Hu, Xingtong Liu, Jiajiang Lv, Chenju Zheng, Xinghuo Ding, and Shengjun Zhou*, Effect of interdigitated SiO2 current blocking layer on external quantum efficiency of high power LEDs, Chinese Journal of Luminescence 38, 6 (2017).


    2. Sheng Liu, Chenju Zheng, Jiajiang Lv, Mengling Liu, Shengjun Zhou*, Effect of high-temperature/current stress on the forward tunneling current of InGaN/GaN high-power blue light-emitting diodes, Japanese Journal of Applied Physics 56, 081001 (2017).


    2. Xinghuo Ding, Chengqun Gui, Hongpo Hu, Mengling Liu, Xingtong Liu, Jiajiang Lv, Shengjun Zhou* (Corresponding author), Reflectance bandwidth and efficiency improvement of light-emitting diodes with double distributed bragg reflector, Applied Optics 56, 4375 (2017).


    2. Chenju Zheng, Jiajiang Lv, Shengjun Zhou*, and Sheng Liu, Improvement of Luster Consistency between the p-Pad and the n-Pad of GaN-Based Light-Emitting Diodes via the Under-Etching Process, Journal of the Korean Physical Society 70, 765 (2017).


    2. Shengjun Zhou, Chenju Zheng, Jiajiang Lv, Yilin Gao, Ruiqing Wang, Sheng Liu, “GaN-based flip-chip LEDs with highly reflective ITO/DBR p-type and via hole-based n-type contacts for enhanced current spreading and light extraction, ” Optics & Laser Technology 92, 95–100 (2017).


    2. Shengjun Zhou, Xingtong Liu, “Effect of V-pits embedded InGaN/GaN superlattices on optical and electrical properties of GaN-based green light-emitting diodes,” Physica Status Solidi A 214, 1600782 (2017).


    2. Jiajiang Lv, Chenju Zheng, Quan Chen, Shengjun Zhou*, and Sheng Liu, “High power InGaN/GaN flip-chip LEDs with via-hole-based two-level metallization electrodes”, Physica Status Solidi A 213, 3150-3156 (2016).


    2. Shengjun Zhou, Chenju Zheng, Jiajiang Lv, Yingce Liu, Shu Yuan, Sheng Liu, and Han Ding, “Effect of profile and size of isolation trench on the optical and electrical performance of GaN-based high-voltage LEDs,” Applied Surface Science 366, 299-303(2016).


    2. Jiajiang Lv, Chenju Zheng, Shengjun Zhou*, Fang Fang, and Shu Yuan, “Highly efficient and reliable high power InGaN/GaN LEDs with 3D patterned step-like ITO and wavy sidewalls, ” Physica Status Solidi A 213, 1181-1186(2016).


    2. Shengjun Zhou, Shu Yuan, L. Jay Guo, Sheng Liu, and Han Ding, “Highly efficient and reliable high power LEDs with patterned sapphire substrate and strip-shaped distributed current blocking layer,” Applied Surface Science 355, 1013-1019(2015).


    2. Shengjun Zhou, Bin Cao, Shu Yuan, and Sheng Liu, “Enhanced luminous efficiency of phosphor-converted LEDs by using back reflector to increase reflectivity for yellow light, ” Applied Optics 53, 8104-8110(2014).


    2. Shengjun Zhou, Shu Yuan, Sheng Liu, and Han Ding, “Improved light output power of LEDs with embedded air voids structure and SiO2 current blocking layer, ” Applied Surface Science 305, 252–258(2014).


    2. Shengjun Zhou, Shufang Wang, Sheng Liu, and Han Ding. High Power GaN-based LEDs with Low Optical Loss Electrode Structure. Optics & Laser Technology 54, 321(2013).


    2. Shengjun Zhou, Fang Fang, Bin Cao, Sheng Liu, and Han Ding, Enhancement in light output power of LEDs with reflective current blocking layer and backside hybrid reflector. Science China Technological Sciences 56, 1544(2013).


    2. Shengjun Zhou, Sheng Liu, and Han Ding. Enhancement in light extraction of LEDs with SiO2 current blocking layer deposited on naturally textured p-GaN surface. Optics & Laser Technology 47, 127(2013).


    2. Bin Cao, Shengjun Zhou, and Sheng Liu. Effects of ITO Pattern on the Electrical and Optical Characteristics of LEDs. ECS Journal of Solid State Science and Technology 2, R24 (2013).


    2. Bin Cao, Shuiming Li, Run Hu, Shengjun Zhou, Yi Sun, Zhiying Gan, and Sheng Liu. Effects of Current Crowding on Light Extraction Efficiency of Conventional GaN-Based Light-emitting Diodes. Optics Express 21, 25381 (2013).


    2. Shengjun Zhou, Bin Cao, Sheng Liu, Han Ding. Improved light extraction efficiency of GaN-based LEDs with patterned sapphire substrate and patterned ITO. Optics & Laser Technology 44, 2302 (2012).


    2. Shengjun Zhou, Bin Cao and Sheng Liu. Optimized ICP etching process for fabrication of oblique GaN sidewall and its application in LED. Applied Physics A: Materials Science & Processing 104, 369 (2011).


    2. Quan Chen, Xiaobing Luo, Shengjun Zhou, and Sheng Liu. Dynamic Junction Temperature Measurement for High Power LEDs. Review of Scientific Instruments 82, 084904 (2011).


    2. Shengjun Zhou, Bin Cao and Sheng Liu. Dry etching characteristics of GaN using Cl2/BCl3 inductively coupled plasmas. Applied Surface Science 257, 905 (2010).


    2. Shengjun Zhou, and Sheng Liu. Transient measurement of light-emitting diode characteristic parameters for production lines. Review of Scientific Instruments 80, 095102 (2009).


    2. Shengjun Zhou, and Sheng Liu. Study on sapphire removal for thin-film LEDs fabrication using CMP and dry etching. Applied Surface Science 255, 9469 (2009).


    2. Shengjun Zhou, Shunsheng Guo, and Binhai Yu. Design of Testing System for LED Optoeletronic Parameter Based on LabVIEW. Semiconductor Optoelectronics 28, 501(2007).

    国际学术会议论文


    2. Shengjun Zhou, 3D flip-chip LEDs, 12th International Conference On Nitride Semiconductors (ICNS-12), July 24-28, 2017, Strasbourg, France.


    2. Hongpo Hu, and Shengjun Zhou, Efficiency enhancement of nitride-based ultraviolet light-emitting diodes with reactive magnetron sputtered AlN nucleation layer on patterned sapphire substrate, International Workshop on UV Materials and Devices (IWUMD-2016), July 27-31, 2016, Beijing, China.


    2. Shengjun Zhou, Jiajiang Lv, Yingce Liu, Shufang Wang, Fang Fang, Hongpo Hu, Qingyong Zhang, Shu Yuan, Sheng Liu, Han Ding, Integrated Manufacturing Process for Highly Efficient and Reliable High Power InGaN/GaN Light-emitting Diodes, 11th International Conference On Nitride Semiconductors (ICNS-11), 2015.


    2. Shengjun Zhou, Sheng Liu, and Bin Cao. Through silicon via-hole-based thin-film light emitting diodes. 60th Electronic Components and Technology Conference (ECTC), 2010.


    2. Shengjun Zhou, Qin Zhang, Bin Cao, Sheng Liu. Evaluation of GaN-based Blue Light Emitting Diodes Based on Temperature/Humidity Accelerated Tests. 11th International Conference on Electronic Packaging Technology & High Density Packaging (ICEPT-HDP), 2010.


    2. Shengjun Zhou, Bin Cao and Sheng liu. Integration of GaN Thin Film and Dissimilar Substrate Material by Au-Sn Wafer Bonding and CMP. International Conference on Electronic Packaging Technology & High Density Packaging (ICEPT-HDP), 2009.


    2. Shengjun Zhou, Zhaohui Chen, Sheng Liu. Fabrication of Thin-film LEDs by Au-Sn Wafer Bonding & CMP. 6th China International Forum on Solid State Lighting, 2009.


    2. Shengjun Zhou, Chuan Liu, Xuefang Wang, Xiaobing Luo, Sheng Liu. Integrated Process for Silicon Wafer Thinning. 61th Electronic Components and Technology Conference (ECTC), 2011.


    2. Sheng Liu, Shengjun Zhou, Kai Wang, Zhaohui Chen, and Xiaobing Luo. Several Co-design Issues Using DfX for Solid State Lighting. 2011 ICEPT-HDP.


    2. Cao Li, Shengjun Zhou, Chang Hu, Xuefang Wang, Sheng Liu. Novel Design of Handling System for Silicon Wafer Thinning. 2011 ICEPT-HDP.


    2. Zhaohui Chen, Shengjun Zhou, and Sheng Liu. Expert advisor for integrated virtual manufacturing and reliability for TSV/SiP based modules. 61th Electronic Components and Technology Conference (ECTC), 2011 (Oral Presentation).


    2. Shengjun Zhou, and Sheng Liu. In situ measurement and binning system of LED for improved color consistency. 2011 ICEPT-HDP. 31


    2. Cao Li, Xuefang Wang, Mingxiang Chen, Shengjun Zhou, Yaping Lv, and Sheng Liu. Novel design and reliability assessment of a 3D DRAM stacking based on Cu-Sn micro-bump bonding and TSV interconnection technology. 63rd Electronic Components and Technology Conference (ECTC), 2013.

    大会报告和邀请报告


    2. The 12th International Symposium on Photonics and Optoelectronics (SOPO 2019)，17th-19th August 2019，Xi'an，China （大会报告）


    2. The 11th International Symposium on Photonics and Optoelectronics (SOPO 2018)，18th-20th August 2018，Kunming，China （大会报告）


    2. 20th Annual Conference of the Chinese Society of Micro-Nano Technology 9th International Conference of the Chinese Society of Micro-Nano Technology，19th-22th October 2018，Zhengzhou，China （特邀报告）


    2. The 4th Laser and Optoelectronics Conference (LOC 2018)，1th-3th December 2018，Sanya，China （特邀报告）


    2. 中国科协第363次青年科学家论坛，2018年10月19-21日，西安，中国 （特邀报告）


    2. 第一届电子器件与机械工程国际学术会议， 2018年3月23-25日，武汉，中国 （大会报告）

      中国发明专利



    4. 一种无引线封装的SiC高温压力传感器的结构与制造方法，中国发明专利，专利申请号：201910053826.7


    6. 倒装结构发光二极管芯片及其制备方法，中国发明专利，专利申请号：201810997251.X


    8. 基于激光直写的Micro-LED的制造方法，中国发明专利，专利号：ZL 201710846736.4


    10. 高压直流氮化镓基发光二极管及其制造方法，中国发明专利，专利号：ZL 201511031187.2


    12. 金属电极具有阵列型微结构的发光二极管及其制造方法，中国发明专利，专利号：ZL 201210349636.8


    14. 一种紫外发光二极管芯片及其制备方法，中国发明专利，专利号：ZL 201610103621.1


    16. LED卷对卷封装模组，中国发明专利，专利号：ZL 201410079623.2


    18. LED圆片级芯片尺寸封装结构及封装工艺，中国发明专利，专利号：ZL 201110457672.1


    20. 高压直流氮化镓基发光二极管及其制造方法，中国发明专利，申请号：ZL 201511031187.2


    22. 一种倒装芯片电极及其制备方法，中国发明专利，申请号：ZL 201610954442.9


    24. 一种半导体发光器件及其制备方法，中国发明专利，申请号：ZL 201710093011.2


    26. 紫外发光二极管外延结构及其制备，中国发明专利，申请号：ZL 201710161944.0


    28. 具有纳米级二氧化硅光栅钝化层的GaN基发光二极管及其加工方法，中国发明专利，申请号：ZL 201810253009.1

    学术专著和会议论文集


    2. 周圣军，刘胜，《氮化镓基发光二极管芯片设计与制造技术》，科学出版社，2019


    4. Sheng Liu and Shengjun Zhou, Proceedings of 2016 17th International Conference on Electronic Packaging Technology (ICEPT), ISBN: 978-1-5090-1396-8

    主持科研项目


    2. 国家重点研发计划—激光制备纳米材料/结构及其用于低温连接的技术与装备及应用（Grant No. 2017YFB1104900）子课题负责人


    4. 国家自然科学基金（面上项目）—深紫外LED芯片金属线网格透明电极与高效出光结构制造的关键技术研究（Grant No. 51675386）项目总负责人


    6. 国家重点研发计划—基于激光制造的跨尺度和多材料纳连接的共性基础问题（Grant No. 2017YFB1104900）子课题负责人


    8. 国家自然科学基金（青年基金）—大尺寸高压直流LED芯片制造的关键技术研究（Grant No. 51305266）项目总负责人


    10. 国家863计划项目—基于失效机理的LED 照明系统可靠性与可控寿命



    12. 技术研究（Grant No. 2015AA03A101）子课题负责人



    14. 长春光机所应用光学国家重点实验室开放基金—Mirco-LED显示芯片制造的关键技术研究 项目总负责人


    16. 湖北省杰出青年基金—基于激光制造深紫外LED芯片高效出光结构的关键技术研究 （Grant No. 2018CFA091）项目总负责人


    18. 国家自然科学基金（NSFC-广东联合重点项目）—晶圆级超大电流密度的3D LED直接白光芯片和芯片级封装制造（Grant No. U1501241）子课题负责人


    20. 博士后基金—高效率氮化物大功率LED芯片设计与制造技术研究（Grant No. 12R21413900）项目总负责人


    22. 广东省部产学研结合项目—新型高速光谱仪关键技术及其在LED荧光粉在线测试中的应用（Grant No. 2012B091100308）项目总负责人


    24. 佛山市院市合作项目—新型大功率LED封装设备（球面成型机的研究及产业化）（Grant No. 2012HY100332）项目总负责人

    参与科研项目


    2. 国家863计划项目-基于图形衬底的高效白光LED外延芯片产业化制备技术研究


    4. 国家863计划项目—应用导向型大功率白光LED可靠性及加速老化寿命试验方法研究


    6. 国家自然科学基金重点项目—大功率LED制造中的关键科学问题


    8. 粤港关键领域重点突破项目—全自动表面贴装LED测试分选机


    10. 国家重大科技专项“极大规模集成电路制造装备及成套工艺”的子项目—三维及系统级封装(SIP)技术的研究

    所获荣誉






    2018         湖北省杰青

    2016      ICEPT 2016国际学术会议组织委员会共同主席

    2015      武汉大学珞珈青年学者

    2012      上海交通大学博士后年度考核优秀

    2011      上海交通大学优秀博士学位论文

    2010      60th ECTC国际学术会议杰出贡献奖

    2010      台湾光华基金会奖学金

    2009      湖北省优秀硕士学位论文

    2008      武汉理工大学优秀硕士学位论文


    职位 科研团队成员 邮箱 zhousj@whu.edu.cn
    电话 办公室
    邮编：430072 版权所有 © 武汉大学工业科学研究院 您是本站第 位访客